BFT46,215

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BFT46,215 datasheet

• Маркировка
  BFT46,215
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BFT46,215 Channel Type: N Configuration: Single Continuous Drain Current: 10 mA Current - Drain (idss) @ Vds (vgs=0): 200?µA @ 10V Current Drain (id) - Max: 10mA Drain Current (idss At Vgs=0): 0.2 mA to 1.5 mA Drain Source Voltage Vds: 25 V Drain To Source Voltage (vdss): 25V Drain-gate Voltage (max): 25V Drain-source Volt (max): 25V Fet Type: N-Channel Gate-source Breakdown Voltage: - 25 V Gate-source Cutoff Voltage: 1.2 V Gate-source Voltage (max): 25V ID_COMPONENTS: 1949137 Input Capacitance (ciss) @ Vds: 5pF @ 10V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Drain Gate Voltage: 25 V Maximum Operating Temperature: + 150 C Mounting: Surface Mount Mounting Style: SMD/SMT Mounting Type: Surface Mount Operating Temperature (max): 150C Operating Temperature (min): -65C Operating Temperature Classification: Military Package / Case: TO-236-3, SC-59, SOT-23-3 Package Type: TO-236AB Pin Count: 3 Power - Max: 250mW Power Dissipation: 250 mW Transistor Polarity: N-Channel Voltage - Cutoff (vgs Off) @ Id: 1.2V @ 0.5nA Product Category: Transistors RF JFET RoHS: yes Drain Source Voltage VDS: 25 V Gate-Source Cutoff Voltage: 1.2 V Gate-Source Breakdown Voltage: - 25 V Drain Current (Idss at Vgs=0): 0.2 mA to 1.5 mA Factory Pack Quantity: 3000 Part # Aliases: BFT46 T/R Other Names: 933410720215, BFT46 T/R
• Количество страниц
  11 шт.
• Форматы файла
  HTML, PDF

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